This document describes the features and characteristics of the FDS8433A P-Channel MOSFET, including low on-state resistance, fast switching speed, high density cell design, and high power handling capability.
This document is a technical datasheet for the Fairchild Semiconductor FDS8433A, a Single P-Channel 2.5V Specified MOSFET. The device utilizes proprietary high cell density DMOS technology to minimize on-state resistance and provide superior switching performance.
The datasheet provides comprehensive electrical characteristics, including absolute maximum ratings, thermal data, and typical performance curves. Key applications identified for this component include load switches, DC/DC converters, and battery protection circuits.
| Drain-Source Voltage | -20 V |
|---|---|
| Gate-Source Voltage | 48 V |
| Continuous Drain Current | 5 A |
| Power Dissipation for Single Operation | 2.5 W |
| Operating Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance (Junction-to-Ambient) | 50 °C/W |
| Thermal Resistance (Junction-to-Case) | 25 °C/W |
The maximum continuous drain current is 5 A.
The maximum power dissipation for single operation is 2.5 W.
The operating and storage junction temperature range is -55 to +150 °C.