The FDS8447 is a single N-channel power trench MOSFET produced by Fairchild Semiconductor Corporation. It uses the advanced PowerTrench® process, which has been specially tailored to minimize on-state resistance and yet maintain superior switching performance. It is suitable for DC-DC conversion applications.
This document is a technical datasheet for the Fairchild Semiconductor FDS8447 Single N-Channel PowerTrench® MOSFET. It describes a device designed with advanced PowerTrench technology to minimize on-state resistance while maintaining superior switching performance.
The datasheet provides comprehensive electrical characteristics, including maximum ratings such as a 40V drain-to-source voltage and 12.8A continuous drain current. It also details thermal characteristics, package marking information, and typical performance graphs for parameters like on-resistance, gate charge, capacitance, and safe operating areas.
| Drain to Source Voltage (VDS) | 40 V |
|---|---|
| Gate to Source Voltage (VGS) | ±20 V |
| Continuous Drain Current (ID) | 12.8A |
| Maximum On-Resistance (rDS(on)) at VGS=10V, ID=12.8A | 10.5mΩ |
| Operating Junction Temperature Range (TJ) | -55 to 150 °C |
The maximum continuous drain current is 12.8A.
Yes, the device is RoHS compliant.
It is suitable for DC-DC conversion applications.