This document describes the features and characteristics of FDP5800 N-Channel Logic Level PowerTrench® MOSFET, including its RDS(on), high-performance trench technology, low gate charge, high power and current handling capability, etc. It is suitable for applications such as motor/body load control, power train management, injection systems, DC-AC converters and UPS.
This document is a technical datasheet for the Fairchild Semiconductor FDP5800, an N-Channel Logic Level PowerTrench MOSFET. The device features a 60V drain-source voltage rating and a continuous drain current of up to 80A at Tc=100°C.
| Drain-Source Voltage | 60 V |
|---|---|
| Gate-Source Voltage | +20 V |
| Continuous Drain Current (Tc = 100°C) | 80 A |
| Package Type | TO-220 |
The device operates and stores within a temperature range of -55 to +175 °C.
The MOSFET can handle a single pulsed avalanche energy of 652 mJ.