This document is the datasheet of FDP5N50NZ / FDPF5N50NZ N-Channel MOSFET. This device is a N-channel enhancement mode power field effect transistor with RDS(on) = 1.38 (Typ.)@ VGS = 10V, ID = 2.25A, low gate charge (Typ. 9nC), low Crss (Typ. 4pF), fast switching, 100% avalanche tested, improved dv/dt capability, ESD improved capability, and RoHS compliant.
This document is a datasheet for the Fairchild FDP5N50NZ and FDPF5N50NZ N-Channel enhancement mode power field effect transistors. These devices utilize Fairchild's proprietary planar stripe DMOS technology, designed for high-efficiency switching mode power supplies and active power factor correction applications. Key features include low gate charge, fast switching speeds, and 100% avalanche testing.
| Drain to Source Voltage | 500 V |
|---|---|
| Gate to Source Voltage | +/- 25 V |
| Continuous Drain Current (Tc = 25°C) | 4.5 A |
| Continuous Drain Current (Tc = 100°C) | 2.7 A |
| Pulsed Drain Current | 18 A |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Package Type | TO-220 / TO-220F |