FDP5N60NZ / FDPF5N60NZ N-Channel MOSFET is rated 600V and has a maximum continuous current of 4.5A with a resistance of 2.0Ω. The product has low gate charge (typ. 10nC), low Crss (typ. 5pF), fast switching, 100% avalanche tested, improved dv/dt capability, ESD improved capability and RoHS compatibility.
This document is a technical datasheet for the Fairchild FDP5N60NZ and FDPF5N60NZ series of N-Channel MOSFETs. These devices utilize proprietary planar stripe, DMOS technology to minimize on-state resistance and provide superior switching performance. They are designed for high energy pulse in avalanche commutation mode and are well suited for switched mode power supplies and active power factor correction applications.
| Drain to Source Voltage | 600 V |
|---|---|
| Power Dissipation (To = 25°C) | 100 W (FDP5N60NZ), 33 W (FDPF5N60NZ) |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction to Case (FDP5N60NZ) | 1.25 °C/W |
The FDP5N60NZ model can dissipate up to 100 W, while the FDPF5N60NZ model is rated for 33 W.