The FDMS8320L N-Channel PowerTrench® MOSFET has low rDS(on) and high efficiency, which is suitable for OringFET / Load Switching, Synchronous Rectification and DC-DC Conversion Power applications
The document describes the Fairchild Semiconductor FDMS8320L, an N-Channel PowerTrench MOSFET optimized for low gate charge, fast switching speed, and body diode reverse recovery performance. It is specifically designed to improve efficiency and minimize switch node ringing in DC/DC converters using synchronous or conventional switching PWM controllers.
Key features include a maximum on-resistance of 1.1 mΩ at Vgs = 10V and Id = 32A, an advanced package design for low conduction loss, and next-generation enhanced body diode technology engineered for soft recovery.
| Drain to Source Voltage (Vds) | 40 V |
|---|---|
| Continuous Drain Current (Package limited) | 100 A |
| Continuous Drain Current (Silicon limited) | 238 A |
| On Resistance (Vgs=10V, Id=32A) | 1.1 mΩ |
| Power Dissipation (Ta=25°C) | 104 W |
| Operating Junction Temperature Range | -55 to +150 °C |
It is designed for OringFET/Load Switching, Synchronous Rectification, and DC-DC Conversion.
The maximum on-region resistance is 1.1 mΩ at Vgs = 10V and Id = 32A.