The FDMS3660S PowerTrench® Power Stage is a dual N-Channel MOSFET with a synchronous SyncFET for low on-resistance and low switching losses.
The FDMS3660S is an Asymmetric Dual N-Channel MOSFET manufactured by Fairchild Semiconductor Corporation. It features two specialized MOSFETs (Q1 and Q2) integrated into a single dual PQFN package to optimize layout for synchronous buck converter applications.
The device includes a control MOSFET (Q1) with a maximum on-resistance of 8 mΩ at VGS = 10V, and a synchronous SyncFET (Q2) with a lower on-resistance of 1.8 mΩ at VGS = 10V. Key features include low inductance packaging to reduce switching losses and internal connection of the switch node for simplified routing.
| Max rDS(on) at VGS = 10V, ID = 13A (Q1) | 8 mΩ |
|---|---|
| Max rDS(on) at VGS = 10V, ID = 30A (Q2) | 1.8 mΩ |
| Operating Junction Temperature Range | -55 to +150 °C |
The device is designed for synchronous buck converters, specifically for computing, communications, and general purpose point of load applications.
The device includes two specialized N-Channel MOSFETs, Q1 (control) and Q2 (sync), in a dual PQFN package.
Yes, the datasheet states that the device is RoHS Compliant.