FDMS3662 is a N-Channel Power Trench® MOSFET produced by Fairchild Semiconductor Corporation. It has a rated voltage of 100V and a rated current of 49A. Its rated on-state resistance is 14.8mΩ. The MOSFET has low on-state resistance, MSL1 robust package, 100% UIL tested, RoHS compliant, etc.
This document is a datasheet for the Fairchild Semiconductor FDMS3662, an N-Channel Power Trench MOSFET designed for DC-DC conversion applications. The device features a 100V drain-to-source voltage rating and a continuous drain current of 49A (package limited) at a case temperature of 25°C. It utilizes an advanced package and silicon combination to minimize on-state resistance while maintaining superior switching performance.
| Drain to Source Voltage | 100 V |
|---|---|
| Continuous Drain Current (Package limited) | 49 A |
| Continuous Drain Current (Silicon limited) | 57 A |
| Continuous Drain Current (Ta = 25°C) | 8.9 A |
| Pulsed Drain Current | 90 A |
| Power Dissipation (Ta = 25°C) | 2.5 W |
| Operating and Storage Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction to Case | 1.2 °C/W |
| Thermal Resistance, Junction to Ambient | 50 °C/W |
The device is primarily intended for DC-DC conversion applications.
Yes, the datasheet states that the device is RoHS Compliant.
The maximum single pulse avalanche energy is 384 mJ.