FDMS8460 N-Channel Power Trench® MOSFET is a N-Channel MOSFET produced by Fairchild Semiconductor. It features a low on-state resistance of only 2.2mΩ. It is suitable for DC-DC conversion applications.
This document is a datasheet for the Fairchild Semiconductor FDMS8460, an N-Channel Power Trench MOSFET rated for 40V, 49A continuous drain current, and 2.2mΩ on-resistance. The device is designed for DC-DC conversion applications and features an advanced package and silicon combination for low on-state resistance and superior switching performance.
| Drain to Source Voltage | 40 V |
|---|---|
| Continuous Drain Current (Package limited) | 49 A |
| Continuous Drain Current (Silicon limited) | 167 A |
| Power Dissipation (Tc = 25°C) | 104 W |
| Operating Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction to Case | 1.2 CAV |
| Static Drain to Source On Resistance (Vgs=10V, Id=25A) | 2.2 mΩ |
The device is primarily intended for DC-DC conversion applications.
Yes, the datasheet states that the device is RoHS Compliant.
The maximum single pulse avalanche energy is 864 mJ.