WaveFET devices are an advanced series of power MOSFETs which utilize Motorola’s latest MOSFET technology process to achieve the lowest possible on–resistance per silicon area. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. WaveFET devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
This document provides technical specifications for the Motorola MMSF3300, a single N-channel Field Effect Transistor (FET) utilizing WaveFET technology. The device is designed for low voltage, high speed switching applications where power efficiency is critical, such as in DC-DC converters and portable battery-powered products. It features an ultralow on-resistance (RDS(on)) and a drain-to-source diode with a very low reverse recovery time.
| Drain-to-Source Voltage | 30 V |
|---|---|
| Continuous Drain Current (Ta = 25°C) | 11.5 A |
| Total Power Dissipation (Ta = 25°C) | 2.5 Watts |
| Thermal Resistance Junction-to-Ambient | 50 °C/W |
| Static Drain-to-Source On-Resistance | 10 to 12.5 mΩ |
| Operating and Storage Temperature Range | -55 to 150 °C |
Typical applications are dc-dc converters, and power management in portable and battery powered products such as computers and cellular phones.
The maximum continuous drain current at 25°C is 11.5 Adc.
The total power dissipation at 25°C is 2.5 Watts.