Motorola TMOS Power MOSFET Transistor Device Data Sheet, High Cell Density Medium Power Surface Mount Products
This document provides technical specifications for the Motorola MMSF3305, a medium power surface mount P-Channel Field Effect Transistor (FET). Utilizing the WaveFET™ design with High Cell Density HDTMOS process, this device is optimized for low voltage, high speed switching applications such as DC-DC converters and power management in portable products. Key features include ultra-low on-resistance, logic level gate drive capability, and a characterized drain-to-source diode suitable for bridge circuits.
| Drain-to-Source Voltage | 30 V |
|---|---|
| Continuous Drain Current | 9.1 A |
| On-Resistance | 0.02 Ohm |
| Operating Temperature Range | -55 to 150 °C |
| Package Type | SO-8 |
The maximum continuous drain current at 25°C is 9.1 Amperes.
Yes, it features logic level gate drive and can be driven by logic ICs.
The device comes in a miniature SO-8 surface mount package.