Motorola TMOS Power MOSFET Transistor Device Data is a document that introduces the power MOSFET transistor devices of Motorola. The document details the features and characteristics of the WaveFET series products, including ultra-low RDS(on), true logic level performance, high energy withstand capability, and low reverse recovery time of the drain-to-source diode. These products are suitable for low voltage, high-speed switching applications and have advantages such as high efficiency and extended battery life. The document also mentions the use of these products in applications such as dc-dc converters, portable battery-powered products, and low voltage motor control.
This document provides technical specifications for the Motorola MMSF3305, a medium power surface mount P-Channel Field Effect Transistor (TMOS). The device features an ultra-low on-resistance of 0.02 ohms and is designed for high-speed switching applications in low-voltage environments.
| Drain-to-Source Voltage | 30 V |
|---|---|
| Continuous Drain Current (Ta = 25°C) | 9.1 A |
| On-Resistance RDS(on) | 0.02 Ohm |
| Operating Temperature Range | -55 to 150 °C |
The device supports a continuous drain current of 9.1 A when the ambient temperature is 25°C.
The maximum total power dissipation is 25 Watts when the ambient temperature is 25°C.
The device can operate and be stored within a temperature range of -55 to 150 °C.