1 Motorola TMOS Power MOSFET Transistor Device Data Low Voltage, High Performance, Medium Power Surface Mount Products Ultra Low RDS(on) and Logic Level Performance
This document provides technical specifications for the Motorola MMSF3205, a medium power surface mount P-Channel Single TMOS MiniMOS Field Effect Transistor. The device utilizes Motorola's High Cell Density (HDTMOS) process to achieve ultra-low on-resistance and true logic-level performance in compact SO-8 packages.
The datasheet outlines maximum ratings such as a 20V drain-to-source voltage and operating temperatures from -55°C to 150°C. It includes detailed electrical characteristics for off-state, on-state, dynamic, switching, and source-drain diode behaviors, along with specific instructions for using the SO-8 surface mount package regarding footprint design and soldering profiles.
| Drain-to-Source Voltage (Vpss) | 20 V |
|---|---|
| Gate-to-Source Voltage (Continuous) | +/- 12 V |
| Operating and Storage Temperature Range | -55 to 150 °C |
| Total Power Dissipation @ Ta = 25°C (FR-4) | 1.56 Watts |
| Pulsed Drain Current (IDM) | 43 A |
Typical applications include dc-dc converters and power management in portable products such as computers, printers, and cellular phones.
The soldering temperature shall not exceed 260°C for more than 10 seconds.