Motorola MMSF3205 Medium Power Surface Mount MOSFET Datasheet

MiniMOS is an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched •and offer additional safety margin against unexpected voltage transients.


Motorola MMSF3205 Medium Power Surface Mount MOSFET Datasheet - cover page
Brand
Motorola
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
6
File format
PDF
File size
108 KB
Published
11 July, 2012
Updated
28 September, 2023
MD5 checksum
383267550CF8352007749C198CA64321

About this manual

This document provides technical specifications for the Motorola MMSF3205, a medium power surface mount P-Channel MOSFET. The device utilizes the High Cell Density (HCD) process to offer ultra-low on-resistance and logic-level gate drive performance suitable for low voltage switching applications.

The datasheet details maximum ratings such as a 20V drain-to-source voltage and operating temperatures from -55°C to 150°C. It also includes comprehensive electrical characteristics, dynamic parameters like capacitance and switching times, and specific guidelines for using the SO-8 surface mount package, including recommended footprints and soldering precautions.

What's inside

  • Product Preview
  • Ordering Information
  • Maximum Ratings
  • Electrical Characteristics
  • SO-8 Package Information
  • Soldering Precautions

Specifications

Drain-to-Source Voltage (Vpss)20 V
Gate-to-Source Voltage (Continuous)+/- 12 V
Total Power Dissipation @ Ta = 25°C25 Watts
Operating and Storage Temperature Range-55 to 150 °C
Static Drain-to-Source On-Resistance (Typical)9.015 Ohm

Frequently asked questions

What is the typical on-resistance of the MMSF3205?

The typical static drain-to-source on-resistance (RDS(on)) is 9.015 Ohms.

Is the MMSF3205 a P-Channel or N-Channel device?

The MMSF3205 is a Single P-Channel TMOS Field Effect Transistor.

What package type does the MMSF3205 use?

The device uses a Miniature SO-8 Surface Mount Package.

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