MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola’s TMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a low reverse recovery time. MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
This document is a Designer's Data Sheet for the Motorola MMSF2P02E, a MiniMOS™ device utilizing the TMOS process. It is a single P-Channel Field Effect Transistor (FET) designed for low voltage, high speed switching applications such as DC-DC converters and power management in portable products. The device features an ultra-low on-resistance of 0.250 ohms and is housed in a miniature SO-8 surface mount package.
| Drain-to-Source Voltage | 20 V |
|---|---|
| Static Drain-to-Source On-Resistance | 0.250 Ohm |
| Operating Temperature Range | -55 to 150 °C |
The static drain-to-source on-resistance is 0.250 Ohms.
The operating and storage temperature range is from -55 to 150 degrees Celsius.