The document describes the technical specifications of Motorola TMOS Power MOSFET Transistor Device Data, including the features of MiniMOS series products, such as ultra low RDS(on) and true logic level performance, avalanche energy, reverse recovery time, etc. The products are mainly used in low voltage, high speed switching applications, such as dc-dc converters, power management, etc.
This document is a Designer's Data Sheet for the Motorola MMSF1310, a single N-channel MiniMOS field effect transistor. The device is designed for low voltage, high speed switching applications where power efficiency is important, such as DC-DC converters and portable battery-powered products. It features ultra low RDS(on) and true logic level performance.
| Drain-to-Source Voltage | 30 V |
|---|---|
| Operating Temperature Range | -55 to 150 °C |
| Static Drain-to-Source On-Resistance | 15 mΩ |
| Package Type | SO-8 |
The maximum drain-to-source voltage is 30 V.
The static drain-to-source on-resistance is 15 mΩ.