This datasheet provides detailed information about Motorola EZFETs (High Density TMOS Power MOSFETs), including maximum ratings, voltages, currents, etc.
This document is a Designer's Data Sheet for the Motorola MMSF10N02Z, a single TMOS Power MOSFET in an SO-8 surface mount package. The device utilizes Motorola's High Cell Density HDTMOS process and includes monolithic back-to-back zener diodes to provide protection against electrostatic discharge (ESD) and unexpected transients.
| Drain-to-Source Voltage | 20 Vdc |
|---|---|
| Continuous Drain Current @ Ta = 25°C | 10 Adc |
| Total Power Dissipation @ Ta = 25°C | 25 Watts |
| Operating and Storage Temperature Range | - 55 to 150 °C |
| Static Drain-to-Source On-Resistance (Vgs = 4.5 V, Id = 10 A) | 9.015 OHM |
| Package Type | SO-8 Surface Mount |
The device contains monolithic back-to-back zener diodes that provide protection against ESD and unexpected transients.
Yes, it features logic level gate drive and can be driven by logic ICs.
The drain-to-source diode exhibits a very low reverse recovery time, with a typical value of 765 ns.