Motorola TMOS Power MOSFET Transistor Device Data is a document that introduces Motorola's medium power surface mount products. These products utilize Motorola's High Cell Density HDTMOS process and contain monolithic back-to-back zener diodes. These diodes provide protection against electrostatic discharge and unexpected voltage transients. These miniature surface mount MOSFETs feature low RDS(on) and true logic level performance. They can withstand high energy in avalanche and commutation modes, and the drain-to-source diode has a very low reverse recovery time. EZFET devices are designed for use in low voltage, high-speed switching applications where power efficiency is important.
This document is a Designer's Data Sheet for the Motorola MMSF10N02Z, an advanced series of power MOSFETs known as EZFETs. These devices utilize Motorola's High Cell Density HDTMOS process and incorporate monolithic back-to-back zener diodes to provide protection against electrostatic discharge (ESD) and unexpected transients.
The datasheet details the electrical characteristics, typical performance curves, and switching behavior of the device. Key features include a 10-ampere continuous drain current rating at 25°C, a maximum drain-to-source voltage of 20 volts, and a low on-resistance (RDS(on)) of 9.015 ohms. The document provides comprehensive data for circuit design under worst-case conditions.
| Drain-to-Source Voltage (Vdss) | 20 Vdc |
|---|---|
| Continuous Drain Current @ Ta = 25°C | 10 Adc |
| Total Power Dissipation @ Ta = 25°C | 25 Watts |
| Operating and Storage Temperature Range | -55 to 150 °C |
| Static Drain-to-Source On-Resistance (Vgs = 4.5 V, Id = 10 A) | 9.015 OHM |
| Package Type | SO-8 Surface Mount |
EZFETs contain monolithic back-to-back zener diodes that provide protection against ESD and unexpected transients.
Yes, it features logic level gate drive and can be driven by logic ICs.
The reverse recovery time (trr) for the source-drain diode is typically 765 ns.