FDMC3612 is a N-channel power MOSFET produced by Fairchild Semiconductor. Its maximum on-state resistance is 110 mΩ and its maximum off-state resistance is 122 mΩ. This product can be used in DC-DC conversion and PSE switch applications.
The document describes the Fairchild Semiconductor FDMC3612, an N-Channel Power Trench MOSFET designed for DC-DC conversion and PSE switch applications. It features a maximum on-state resistance of 110 mΩ at Vgs=10V and is RoHS compliant.
The datasheet provides comprehensive electrical characteristics including off-characteristics like breakdown voltage, on-characteristics such as threshold voltage and static drain-to-source resistance, and dynamic parameters like capacitance and switching times. It also includes typical performance graphs for on-resistance versus temperature and gate charge.
| Drain to Source Voltage (Vdss) | 100 V |
|---|---|
| Continuous Drain Current (Silicon limited) | 12 A |
| Static Drain to Source On Resistance | 110 mΩ |
| Operating Junction Temperature Range | -55 to + 150 °C |
| Power Dissipation (Tg = 25°C) | 35 W |
Yes, the product is RoHS Compliant.
The maximum power dissipation is 35 W at a junction temperature of 25°C.
The operating and storage junction temperature range is from -55 to +150 °C.