The FDMC4435BZ P-Channel Power Trench® MOSFET is a trench technology MOSFET produced by Fairchild Semiconductor. It has the characteristics of high performance, low power consumption, and high current driving capability. It is suitable for load switching applications in notebook computers and portable battery packs.
This document is a technical datasheet for the Fairchild Semiconductor FDMC4435BZ, a P-Channel Power Trench MOSFET. The device operates at voltages up to -30 V with continuous drain currents of -18 A (package limited) and features an on-resistance as low as 20 mΩ.
| On-Resistance | 20 mΩ |
|---|---|
| HBM ESD protection level | >7 kV typical |
It is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Yes, the termination is Lead-free and RoHS Compliant.