The FDMC8200S is a dual N-Channel PowerTrench® MOSFET from Fairchild Semiconductor Corporation with a rated voltage of 30 V and a maximum on-resistance of 10 mΩ and 20 mΩ.
The FDMC8200S is a dual N-Channel PowerTrench MOSFET housed in a 3mm x 3mm MLP package. It features an internally connected switch node to facilitate the placement and routing of synchronous buck converters, optimizing power efficiency for control (Q1) and synchronous (Q2) operations.
The device operates with a maximum drain-to-source voltage of 30V per channel. Key electrical characteristics include continuous drain currents up to 6A for Q1 and 8.5A for Q2 at specific gate voltages, along with detailed thermal resistance values and switching parameters suitable for high-frequency applications.
| Drain to Source Voltage (VDS) | 30 V |
|---|---|
| Continuous Drain Current Q1 (Ta=25°C) | 6 A |
| Continuous Drain Current Q2 (Ta=25°C) | 8.5 A |
| Operating Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance Junction-to-Ambient (RθJA) | 65 °C/W |
The device is designed for Mobile Computing, Mobile Internet Devices, and General Purpose Point of Load applications.
The device is available in a 3mm x 3mm MLP (Micro Leadframe) Power33 package.