This document describes the features and characteristics of FDMC8010 N-Channel PowerTrench® MOSFET, including maximum on-state resistance, high-performance technology, lead-free and RoHS compliant termination, etc.
The document describes the Fairchild Semiconductor FDMC8010, an N-Channel PowerTrench MOSFET rated at 30 V and 75 A with a maximum static drain-to-source on-resistance of 1.3 mΩ. The device is manufactured using advanced PowerTrench technology to minimize resistance in small spaces.
Key features include lead-free termination compliant with RoHS standards, making it suitable for high-performance VRM, POL, Oring functions, and DC-DC buck converters. The datasheet provides maximum ratings, electrical characteristics, typical performance graphs, and dimensional outlines.
| Drain to Source Voltage (VDS) | 30 V |
|---|---|
| Gate to Source Voltage (VGSS) | 20 V |
| Static Drain to Source On Resistance (Typical) | 1.3 mΩ |
| Power Dissipation (Tc = 25°C) | 54 W |
| Operating Junction Temperature Range | -55 to +150 °C |
The maximum continuous drain current (package limited) at Tc = 25°C is 75 A.
Yes, the termination is lead-free and RoHS Compliant.