FDMC8321L is an N-channel power MOSFET with a maximum drain-to-source voltage of 40V, a maximum drain current of 49A, and a maximum on-resistance of 2.5mΩ. It features advanced packaging and silicon combination for low on-resistance and high efficiency; next generation enhanced body diode technology for soft recovery; and is 100% UIL tested and RoHS compliant.
This document is a technical datasheet for the Fairchild Semiconductor FDMC8321L, an N-Channel Power Trench MOSFET. The device features a maximum drain current of 49A (continuous package limit) and a breakdown voltage of 40V. It is optimized for low gate charge and fast switching speeds to improve efficiency in DC/DC converters.
| Drain to Source Voltage (Vdss) | 40 V |
|---|---|
| Continuous Drain Current (Package limit) | 49 A |
| Power Dissipation (Ta = 25°C) | 40 W |
| Operating Junction Temperature Range | -55 to +150 C |
The device is designed for synchronous rectifiers and load switches.
Yes, the document states that the device is RoHS Compliant.