FDMC8554 N-Channel Power Trench® MOSFET is an N-Channel MOSFET produced by Fairchild Semiconductor Corporation. It features a maximum on-resistance of 5 mΩ and is packaged in a 3.3x3.3 mm MicroFET. It complies with the RoHS standard.
The FDMC8554 is an N-Channel Power Trench MOSFET manufactured by Fairchild Semiconductor using their advanced Power Trench process. It is designed for applications requiring switching performance and ultra-low on-resistance, specifically optimized for synchronous rectifiers, ORing FETs, and POL rectifiers. The device features a low profile of 1mm maximum in a MicroFET 3.3x3.3 mm package and is RoHS compliant.
The document provides comprehensive electrical characteristics, including maximum ratings, off and on characteristics, dynamic parameters, and switching characteristics. It also details the drain-source diode characteristics, typical performance curves, and package mechanical dimensions with recommended land patterns for assembly.
| Package Type | MicroFET 3.3x3.3 mm |
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The device is optimized for use as a synchronous rectifier, an ORing FET, or a POL rectifier.
Yes, the datasheet explicitly states that the product is RoHS Compliant.