Fairchild Semiconductor FDMC86102 N-Channel Power Trench MOSFET Datasheet

FDMC86102 N-Channel Power Trench® MOSFET is a high-performance power MOSFET with low on-state resistance and high switching speed, which can be used in DC-DC conversion circuits.


Fairchild Semiconductor FDMC86102 N-Channel Power Trench MOSFET Datasheet - cover page
Brand
Fairchild
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
7
File format
PDF
File size
278 KB
Published
11 July, 2012
Updated
30 September, 2023
MD5 checksum
C65B9611E6A2C3EA3CF81C2044139037

About this manual

This document is a datasheet for the Fairchild Semiconductor FDMC86102, an N-Channel Power Trench MOSFET. The device is designed for DC-DC conversion applications and features a maximum on-state resistance of 24 mΩ. It operates with a drain-to-source voltage rating of 100V and a continuous drain current of 20A.

What's inside

  • General Description
  • Maximum Ratings
  • Thermal Characteristics
  • Electrical Characteristics
  • Typical Characteristics
  • Package Marking and Ordering Information
  • Dimensional Outline and Pad Layout

Frequently asked questions

What is the primary application for this MOSFET?

The document lists DC-DC Conversion as the application.

What is the maximum continuous drain current for this MOSFET at 25°C?

The maximum continuous drain current is 20 A when the temperature is 25°C.

What is the maximum power dissipation rating at 25°C?

The maximum power dissipation is 41 W at a temperature of 25°C.

What is the maximum operating junction temperature range?

The operating and storage junction temperature range is from -55°C to +150°C.

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