This document is a datasheet of FDMC8462 N-Channel Power Trench® MOSFET, including product features, maximum ratings, applications, characteristics, technical parameters, etc.
This document is a technical datasheet for the Fairchild Semiconductor FDMC8462, an N-Channel Power Trench MOSFET designed for DC-DC conversion applications. The device features a maximum on-resistance of 5.8mQ at Vgs = 10V and Id = 13.5A, with a continuous drain current rating of 20A (package limited) at Ta = 25°C.
| Drain to Source Voltage (Vdss) | 40 V |
|---|---|
| Continuous Drain Current (Package limited) | 20 A |
| Power Dissipation | 41 W |
| Operating Junction Temperature Range | -55 to +150 C |
The device supports a continuous drain current of 20 A when limited by the package at an ambient temperature of 25°C.
The maximum power dissipation is rated at 41 W when the junction temperature is maintained at 25°C.
The device operates and stores within a junction temperature range of -55 to +150 °C.