This document describes the features and characteristics of the FDMC8296 N-Channel Power Trench® MOSFET, including the maximum on-state resistance and its applications.
This document is a datasheet for the Fairchild Semiconductor FDMC8296, an N-Channel Power Trench MOSFET. The device is designed for power management and load switching applications commonly found in notebook computers and portable battery packs. It features a lead-free and RoHS-compliant termination.
The device supports a package-limited current of 18 A and a silicon-limited current of 44 A at 25°C, with a pulsed rating of 52 A.
The MOSFET can operate and be stored within a junction temperature range of -55 to +150 °C.
The device dissipates a maximum of 27 W at 25°C when mounted on a tin-plated 2 oz copper pad.