Fairchild Semiconductor FDMC8296 N-Channel Power Trench MOSFET Datasheet

This document describes the features and characteristics of the FDMC8296 N-Channel Power Trench® MOSFET, including the maximum on-state resistance and its applications.


Fairchild Semiconductor FDMC8296 N-Channel Power Trench MOSFET Datasheet - cover page
Brand
Fairchild
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
7
File format
PDF
File size
367 KB
Published
11 July, 2012
Updated
28 September, 2023
MD5 checksum
01E00F5AA088B6F8790E6A15F22B6A32

About this manual

This document is a datasheet for the Fairchild Semiconductor FDMC8296, an N-Channel Power Trench MOSFET. The device is designed for power management and load switching applications commonly found in notebook computers and portable battery packs. It features a lead-free and RoHS-compliant termination.

What's inside

  • Features
  • General Description
  • Maximum Ratings
  • Thermal Characteristics
  • Electrical Characteristics
  • Typical Characteristics
  • Dimensional Outline
  • Package Marking

Frequently asked questions

What are the maximum continuous drain currents for this MOSFET?

The device supports a package-limited current of 18 A and a silicon-limited current of 44 A at 25°C, with a pulsed rating of 52 A.

What is the maximum operating junction temperature range?

The MOSFET can operate and be stored within a junction temperature range of -55 to +150 °C.

What is the maximum power dissipation when mounted on a 2 oz copper pad?

The device dissipates a maximum of 27 W at 25°C when mounted on a tin-plated 2 oz copper pad.

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