FDMC86248 N-Channel Power Trench® MOSFET is a high-performance product produced by Fairchild Semiconductor with a maximum resistance of 90 mΩ. It can be used for primary MOSFET and MV synchronous rectifier MOSFET applications.
This document is a technical datasheet for the Fairchild Semiconductor FDMC86248, an N-Channel Power Trench MOSFET. The device operates at voltages up to 150V with continuous drain currents of 13A and features a maximum on-resistance (Rds(on)) of 90 mΩ. It is designed for applications such as primary switching and synchronous rectification.
| Drain to Source Voltage (Vdss) | 150 V |
|---|---|
| Maximum On-Resistance (Rds(on)) | 90 mΩ |
| Power Dissipation (Ta = 25°C) | 36 W |
| Operating Junction Temperature Range | -55 to +150 °C |
The device supports a maximum continuous drain current of 13 A when the junction temperature is 25°C.
The device operates and stores within a junction temperature range of -55 to +150 °C.
The MOSFET can withstand a single pulse avalanche energy of 37 mJ when starting at a junction temperature of 25°C.