The FCP36N60N N-Channel MOSFET is a 600V, 36A, 90mΩ SupreMOSTM MOSFET. It features RDS(on) = 81mΩ (Typ.)@ VGS = 10V, ID = 18A, ultra low gate charge (Typ. Qg = 86nC), low effective output capacitance and 100% avalanche tested.
This document is a datasheet for the Fairchild Semiconductor FCP36N60N, a 600V, 36A SupreMOS N-Channel MOSFET. It highlights the device's deep trench filling process technology, which provides superior switching performance and ruggedness for AC-DC SMPS applications.
The datasheet provides comprehensive electrical characteristics, including maximum ratings, off and on characteristics, dynamic parameters, and switching characteristics. It also includes typical performance characteristics graphs and mechanical dimensions for the TO-220 package.
| Package Type | TO-220 |
|---|
The device supports a continuous drain current of 36 A when the junction temperature is 25°C.
This component can operate and be stored in a temperature range from -55 to +150 °C.
The maximum power dissipation for this MOSFET is 312 W at a temperature of 25°C.