The FCP380N60 / FCPF380N60 is a N-Channel MOSFET from Fairchild Semiconductor Corporation that has a maximum rated voltage of 650V @TJ = 150°C, a maximum RDS(on) of 380mΩ, ultra low gate charge (typ. Qg = 30nC) and low effective output capacitance (typ. Coss.eff = 95pF).
This document is a technical datasheet for the Fairchild Semiconductor FCP380N60 and FCPF380N60 N-Channel MOSFETs. It describes the SuperFET® II technology, which offers low on-resistance and lower gate charge for high-voltage applications. The datasheet provides absolute maximum ratings, electrical characteristics, and typical performance characteristics including capacitance and switching parameters.
| Drain to Source Voltage | 600 V |
|---|---|
| Drain Current-Continuous (TC = 25°C) | 10.2 A |
| Max. RDS(on) | 380m Ω |
| Operating and Storage Temperature Range | -55 to +150°C |
| Thermal Resistance, Junction to Case | 1.18 °C/W |
| Package Type | TO-220 |
The maximum continuous drain current is 10.2 A when the case temperature is 25°C.
The device has a maximum drain to source voltage rating of 600 V.
The operating and storage temperature range is from -55 to +150°C.