The BUZ11 is a 30A, 50V, 0.040 Ohm N-channel power MOSFET manufactured by Fairchild Semiconductor Corporation. It has nanosecond switching speeds, linear transfer characteristics, high input impedance and majority carrier device features.
This document is a technical datasheet for the Fairchild Semiconductor BUZ11, an N-Channel enhancement mode silicon gate power field effect transistor. It is designed for applications such as switching regulators, switching converters, motor drivers, and relay drivers requiring high speed and low gate drive power.
The datasheet provides detailed electrical specifications, absolute maximum ratings, and typical performance curves. Key features include a 30A continuous drain current, 50V breakdown voltage, and nanosecond switching speeds.
| Continuous Drain Current (To = 25°C) | 30 A |
|---|---|
| Drain to Source Breakdown Voltage | 50 V |
| Maximum Power Dissipation | 75 W |
| Operating and Storage Temperature | -55 to 150 °C |
| Drain to Source On Resistance (Typical) | 0.04 Ohm |
It is designed for applications such as switching regulators, switching converters, motor drivers, and relay drivers.
Yes, this type can be operated directly from integrated circuits.