This document describes the features and characteristics of the FGL40N120AND 1200V NPT IGBT product from Fairchild Semiconductor Corporation, including high speed switching, low saturation voltage, and high input impedance. The product is suitable for applications such as induction heating, UPS, AC & DC motor controls, and general purpose inverters.
This document is a technical datasheet for the Fairchild Semiconductor FGL40N120AND, an N-channel Power Transistor (IGBT) designed for high-speed switching applications. The device utilizes NPT technology to provide low conduction and switching losses.
The FGL40N120AND is specified with a collector-emitter voltage of 1200V and is housed in a TO-264 package. It includes an integrated FRD (Fast Recovery Diode) and is intended for use in induction heating, UPS systems, AC & DC motor controls, and general-purpose inverters.
| Gate-Emitter Voltage | +/- 25 V |
|---|---|
| Collector Current @Tg = 25°C | 64 A |
| Pulsed Collector Current | 160 A |
| Maximum Power Dissipation @Tg = 25°C | 500 W |
| Operating Junction Temperature | -55 to +150 °C |
| Package Type | TO-264 |
It is suitable for induction heating, UPS, AC & DC motor controls, and general purpose inverters.
The typical turn-on delay time (tj(on)) is 15 ns.
The maximum collector current (Ic) at a junction temperature of 25°C is 64 A.