This document describes the features of a 30V, 4.0A, N-channel power MOSFET and 1.0A Schottky barrier diode. The product is packaged in a leadless SMD package, with lower thermal resistance and low Schottky forward voltage drop.
This document is a datasheet for the NTLJF4156N, a leadless surface-mount device (SMD) combining an N-channel MOSFET and a Schottky barrier diode in a 2x2 mm uCool SC-88FL package. The device is designed for applications requiring low voltage operation and efficient power conversion, such as DC-DC converters and battery management systems in cell phones and PDAs.
The datasheet provides maximum ratings, electrical characteristics for both the MOSFET and Schottky diode at various temperatures, and typical performance curves. Key specifications include a drain-to-source voltage of 30V, a continuous drain current of 4.0A, and a low forward voltage for the Schottky diode. The document also details thermal resistance ratings and ordering information for the Pb-free package.
| Drain-to-Source Voltage | 30 V |
|---|---|
| Continuous Drain Current | 4.0 A |
| Package Type | SC-88FL 2x2 mm |
| Schottky Diode Forward Voltage | 0.48 V Typ |
| Gate Threshold Voltage | 0.4 V Min |
| Power Dissipation | 1.21 W |
The device is available in a 2x2 mm SC-88FL uCool™ package.
Yes, the document states this is a Pb-Free Device.
It is intended for DC-DC converters and Li-Ion battery applications in cell phones and PDAs.