This document describes the NTMD3P03R2 dual P-channel power MOSFET. The product features high efficiency, low RDS(on), and a small package size, making it suitable for applications such as DC-DC converters, low voltage motor control, and portable battery-powered devices.
This document is a datasheet for the NTMD3P03R2, a dual P-channel Power MOSFET manufactured by ON Semiconductor. The device is housed in a miniature SO-8 surface mount package and is specified for applications such as DC-DC converters, low voltage motor control, and power management in portable products.
| Drain-to-Source Voltage | -30 V |
|---|---|
| Continuous Drain Current @ 25°C | -3.05 A |
| Package Type | Dual SO-8 |
| Total Power Dissipation @ Ta = 25°C | 2.0 W |
| Operating and Storage Temperature Range | -55 to +150°C |
The device is suitable for DC-DC converters, low voltage motor control, and power management in portable and battery-powered products.
The maximum lead temperature for soldering is 260°C.