NTMD2C02R2/D is a low voltage, high speed switching MOSFET device with ultra low RDS(on) and true logic level performance.
The document is a technical datasheet for the NTMD2C02R2, a preferred device by ON Semiconductor. It describes a miniature surface-mount Power MOSFET available in a dual complementary SO-8 package containing both N-Channel and P-Channel devices.
These MiniMOS™ devices are designed for low-voltage, high-speed switching applications where power efficiency is critical. Key features include ultra-low on-resistance (Rds(on)), true logic-level gate drive capability, and diodes characterized for use in bridge circuits with soft recovery characteristics.
| Continuous Drain Current (N-Channel) | 5.2 A |
|---|---|
| Continuous Drain Current (P-Channel) | 3.4 A |
| Package Type | SO-8, Dual |
| Total Power Dissipation (Ta=25°C) | 2.0 Watts |
The maximum total power dissipation at 25°C is 2.0 Watts.