ON Semiconductor NTMD4102PR2 P-Channel Trench Power MOSFET Datasheet

The NTMD4102PR2 is a P-channel MOSFET from ON Semiconductor that features low RDS(on) performance and is suitable for use in game systems, notebook and desktop computers, and printers

Brand: ON Semiconductor
Category: Other Electronics
Document type: Datasheet
Language: English
Pages: 4
File format: PDF
File size: 45 KB
Published: 11 July, 2012
Updated: 30 September, 2023
MD5 checksum: FBF167C4571E8E6ABC573DA67D51B0FB
PDF: ON Semiconductor NTMD4102PR2 P-Channel Trench Power MOSFET Datasheet PDF

About this manual

This document is a product preview for the NTMD4102PR2, a P-Channel Trench Power MOSFET featuring ON Semiconductor's leading edge trench technology. The device is optimized for high power and current handling capability with low on-resistance (RDS(on)) in an SO-8 dual package.

What's inside

Features & Benefits
Maximum Ratings
Thermal Resistance Ratings
Electrical Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Package Dimensions

Specifications

Drain-to-Source Voltage	-20 V
Gate-to-Source Voltage	±20V
Operating Junction and Storage Temperature Range	-55 to 150°C

Frequently asked questions

What is the maximum allowable junction and storage temperature range?

The operating junction and storage temperature ranges from -55 to 150°C.

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