The IR2101(S)/IR2102(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
The IR2101(S) and IR2102(S) are high voltage, high speed power MOSFET and IGBT drivers featuring independent high and low side referenced output channels. Utilizing proprietary HVIC and latch immune CMOS technologies, these devices offer ruggedized monolithic construction compatible with standard CMOS or LSTTL outputs down to 3.3V logic. The floating channel is designed for bootstrap operation and can drive N-channel power MOSFETs or IGBTs in high side configurations up to 600 volts.
| High side floating supply voltage | -0.3 to 625 V |
|---|---|
| Gate drive supply range | 10 to 20 V |
| Turn-on propagation delay (typ) | 160 ns |
| Turn-off propagation delay (typ) | 150 ns |
| Delay matching, HS & LS turn-on/off | 50 ns |
The gate drive supply range is from 10 to 20V.