The IR2112 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Its features include a floating channel design, fully operational up to +600V, tolerance to negative transient voltage, gate drive supply range from 10 to 20V, undervoltage lockout, and matched propagation delay.
The IR2112 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It utilizes proprietary HVIC and latch immune CMOS technologies for ruggedized monolithic construction. The device is fully operational to +600V and features a floating channel designed for bootstrap operation to drive N-channel power MOSFETs or IGBTs in the high side configuration.
| Maximum High Side Floating Supply Voltage | 625 V |
|---|---|
| Maximum High Side Floating Supply Offset Voltage | 600 V |
| Gate drive supply range | 10 to 20 V |
| Turn-On Propagation Delay (Typical) | 125 ns |
| Turn-Off Propagation Delay (Typical) | 105 ns |
| Delay Matching (Typical) | 30 ns |
| Junction Temperature (Max) | 150 °C |
| Output High Short Circuit Pulsed Current | 200 mA |
| Output Low Short Circuit Pulsed Current | 420 mA |
The maximum high side floating supply voltage is 625 V.
The gate drive supply range is from 10 to 20 V.
The typical delay matching for both channels is 30 ns.