The document describes a high voltage, high speed power MOSFET and IGBT driver called IR2106(4)(S) with independent high and low side referenced output channels. It can drive an N-channel power MOSFET or IGBT in the high side configuration up to 600 volts. The product features a floating channel, designed for bootstrap operation, high pulse current buffer stage, and matched propagation delay.
The document describes the IR2106(4)(S) as a proprietary HVIC designed for driving N-channel power MOSFETs or IGBTs in both high-side and low-side configurations. It features floating channel operation suitable for bootstrap applications, with full operational capability up to +600V and tolerance for negative transient voltages.
| High side floating absolute voltage (VB) | -0.3 to 625 V |
|---|---|
| Low side and logic fixed supply voltage (Vcc) | -0.3 to 25 V |
| Gate drive supply range | 10 to 20 V |
| Turn-on propagation delay (ton) | Typ. 300 ns, Max. 500 ns |
| Turn-off propagation delay (totf) | Typ. 280 ns, Max. 500 ns |
| Delay matching (MT) | Typ. 30 nsec, Max. 50 nsec |
| Output high short circuit pulsed current (Ios+) | Typ. 200 mA |
| Output low short circuit pulsed current (Ios-) | Typ. 350 mA |
The maximum high side floating absolute voltage (VB) is 625 V.
The high side floating supply (VB) should be between +10 V and +20 V, while the low side and logic fixed supply (Vcc) ranges from 10 to 20 V.
Yes, the device is designed to be tolerant to negative transient voltage.