The IR2118 is a high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS outputs. The output driver features a high pulse current buffer stage designed for minimum cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high or low side configuration which operates up to 600 volts.
The International Rectifier IR2118 is a high voltage, high speed power MOSFET and IGBT driver designed for floating channel bootstrap operation. It utilizes proprietary HVIC and latch immune CMOS technologies to provide ruggedized monolithic construction compatible with standard CMOS outputs.
The device features a high pulse current buffer stage to minimize cross-conduction and can operate up to 600 volts. It includes undervoltage lockout and is tolerant to negative transient voltages, making it suitable for driving N-channel power MOSFETs or IGBTs in both high and low side configurations.
| Turn-On Propagation Delay | 125 ns |
|---|---|
| Package Types | 8 Lead PDIP / SO-8 |
The device is available in 8 Lead PDIP and SO-8 packages.
The device is tolerant to a maximum offset voltage of 600V.
The gate drive supply range is from 10 to 20V.
The maximum junction temperature is 150°C.