This document describes the features and characteristics of the CMPT3640 PNP silicon transistor manufactured by Central Semiconductor Corp. The transistor is made using the epitaxial planar process and is epoxy molded in a surface mount package. It is designed for saturated switching applications.
The document describes the CENTRAL SEMICONDUCTOR CMPT3640, a PNP silicon transistor manufactured by the epitaxial planar process. It is epoxy molded in an SOT-23 surface mount case designed for saturated switching applications with a marking code of C2J.
The datasheet provides maximum ratings such as a collector-emitter voltage of 12V and a power dissipation of 350mW. It also lists electrical characteristics including leakage currents, breakdown voltages, saturation voltages, and transition frequencies under specific test conditions.
| Collector-Base Voltage (Vcbo) | 12 V |
|---|---|
| Collector-Emitter Voltage (Vceo) | 12 V |
| Emitter-Base Voltage (Vebo) | 4.0 V |
| Collector Current (Io) | 80 mA |
| Power Dissipation (Pb) | 350 mW |
The CMPT3640 is designed for saturated switching applications.
The maximum collector current is 80 mA.
The maximum power dissipation is 350 mw.