The CMPT2907A is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and switching applications.
This document is a datasheet for the Central Semiconductor CMPT2907A, a PNP silicon transistor manufactured using the epitaxial planar process. The device is housed in a surface-mount SOT-23 case and is designed for small signal general purpose and switching applications.
The datasheet provides maximum ratings for parameters such as collector-base voltage, collector current, and power dissipation. It also details electrical characteristics including collector cutoff current, current gain, and transition frequency under specific test conditions.
| Operating and Storage Junction Temperature | -65 to +150 °C |
|---|---|
| Thermal Resistance | 357 OC/W |
| Current Gain (hFE) Min | 50 |
| Current Gain (hFE) Max | 200 |
| Transition Frequency (fT) | 100 MHz |
The operating and storage junction temperature range is -65 to +150 °C.