Silicon Storage Technology 28PC040 Data Sheet

SST 28PC040 is a 5.0V-only 4 Megabit PCMCIA Interface EEPROM. It features CMOS SuperFlash EEPROM technology, with endurance of 250,000 cycles and data retention of over 100 years. The product has characteristics such as low power consumption, fast erase and program operation, and fast access time.


Silicon Storage Technology 28PC040 Data Sheet - cover page
Brand
SST
Category
Memory
Document type
Datasheet
Language
English
Pages
26
File format
PDF
File size
1.4 MB
Published
09 July, 2012
Updated
29 September, 2023
MD5 checksum
6E25AFBB3316E3019F898922A8DD271A

About this manual

The document describes the SST 28PC040, a 4 Megabit (1M x 4) EEPROM designed for PCMCIA applications using Silicon Storage Technology's proprietary CMOS SuperFlash technology. It operates with a single 5.0-volt power supply and offers high endurance of 250,000 cycles with data retention greater than 100 years.

The device features a split memory organization consisting of a common memory array (512K x 8) for user data and an attribute memory array (1K x 8) accessible via the REG# pin or Enable_Attribute command. Key operational characteristics include fast access times of 150ns and 250ns, low power consumption in active and standby modes, and hardware/software write protection mechanisms.

What's inside

  • Features
  • Product Description
  • Device Operation
  • Memory Map
  • Command Definitions
  • Sector_Erase Operation
  • Byte_Program Operation
  • Data Protection

Specifications

Capacity4 Megabit (512K x 8 / 1M x 4)
TechnologyCMOS SuperFlash EEPROM Technology
Endurance250,000 Cycles (typical)
Data RetentionGreater than 100 Years
Active Current15 mA (typical)
Standby Current5 uA (typical)
Byte Program Time30 us (typical)
Sector Erase Time60 us (typical)
Complete Memory Rewrite Time15 sec (typical)

Frequently asked questions

What is the voltage requirement for the SST 28PC040?

The device operates with a single 5.0-volt power supply.

How is the memory organized in the SST 28PC040?

It consists of a 1M-nibble common memory array and a 2K nibble attribute memory array.

What is the typical access time for this EEPROM?

The device offers fast access times of 150ns and 250ns.

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