This data sheet introduces the features and characteristics of SST29EE010 / SST29LE010 / SST29VE010 1 Mbit (128K x8) Page-Mode EEPROM, including single voltage read and write operations, endurance, low power consumption, fast page write operation, fast read access time, latched address and data, automatic write timing, internal VPP generation, write end detection, hardware and software data protection, TTL I/O compatibility, JEDEC standard.
The 1 Mbit (128K x8) Page‑Mode EEPROM family offers high‑performance, low‑power memory with a 128‑byte page size and 1024 pages per device. Features include single‑voltage operation, superior reliability, fast page‑write (5 ms typical) and read access times as low as 70 ns.
The devices support JEDEC‑standard pinouts and include hardware and software data‑protection schemes. Multiple supply options are provided (5 V for SST29EE010, 3.0‑3.6 V for SST29LE010, 2.7‑3.6 V for SST29VE010) and they operate over commercial and industrial temperature ranges.
| Memory size | 128 Kbytes (128K x8) |
|---|---|
| Page size | 128 Bytes |
| Number of pages | 1024 |
| Endurance | 100,000 cycles (typical) |
| Data retention | Greater than 100 years |
| Active current (5 V) | 20 mA (typical) |
| Read access time (5 V) | 70 ns to 90 ns |
| Operating temperature (commercial) | 0 °C to +70 °C |
| Operating temperature (industrial) | -40 °C to +85 °C |
| Supply voltage (SST29EE010) | 5.0 V (+10%) |
The devices are rated for 100,000 write cycles typical.
A complete memory rewrite can be done in about 5 seconds typical.
SST29EE010 uses 5.0 V, SST29LE010 uses 3.0‑3.6 V, and SST29VE010 uses 2.7‑3.6 V supply.
Write completion can be detected using Data# Polling (DQ7) or the Toggle Bit (DQg).