This document describes the features and characteristics of the SST39LF/VF200A/400A/800A series products, including capacity, operating voltage, reliability, low power consumption, erase and programming time, etc.
The SST39LF/VF series provides 2 Mbit, 4 Mbit and 8 Mbit x16 CMOS multi‑purpose flash memories. They operate at 3.0‑3.6 V (LF devices) or 2.7‑3.6 V (VF devices), offer typical endurance of 100,000 cycles and data retention of over 100 years, and feature low active (20 mA) and standby (3 µA) currents. Read access times range from 45 ns to 90 ns, and erase times are as short as 18 ms for sector erase.
These devices are available in 48‑lead TSOP and 48‑ball TFBGA packages, with uniform 2 KWord sectors and 32 KWord blocks. The datasheet details pin assignments, command sequences for read, word‑program, sector/block/chip erase, and status detection methods such as Data# polling and Toggle Bit. It also includes CFI query information and product identification procedures.
| Memory organization | 128K x16 / 256K x16 / 512K x16 |
|---|---|
| Operating voltage (LF devices) | 3.0‑3.6 V |
| Operating voltage (VF devices) | 2.7‑3.6 V |
| Endurance | 100,000 cycles (typical) |
| Data retention | >100 years |
| Active current | 20 mA (typical) |
| Standby current | 3 µA (typical) |
| Read access time | 45‑90 ns |
| Sector‑erase time | 18 ms (typical) |
| Block‑erase time | 18 ms (typical) |
| Chip‑erase time | 70 ms (typical) |
| Word‑program time | 14 µs (typical) |
| Package options | 48‑lead TSOP, 48‑ball TFBGA |
| Sector size | 2 KWord |
| Block size | 32 KWord |
The SST39LF200A operates from a 3.0 V to 3.6 V supply.
A sector‑erase operation typically completes in 18 ms.
They are rated for 100,000 program/erase cycles typical.
The devices are offered in 48‑lead TSOP and 48‑ball TFBGA packages.