This data sheet introduces the features and characteristics of the SST29EE010 / SST29LE010 / SST29VE010 1 Mbit (128K x8) Page-Mode EEPROM.
The SST29EE010, SST29LE010 and SST29VE010 are 128 K ×8 CMOS page‑write EEPROMs offering high‑performance read and write operations. They feature single‑voltage operation (5 V for EE010, 3.0‑3.6 V for LE010, 2.7‑3.6 V for VE010), 100 000‑cycle endurance, >100‑year data retention, and fast page‑write cycles (5 ms typical) with a 39 µs byte‑write time.
These devices are supplied in 32‑lead PLCC, 32‑lead TSOP and 32‑pin PDIP packages and conform to JEDEC standard pinouts. They include hardware and optional JEDEC‑approved software data protection, and provide two software status bits (Data# Polling and Toggle Bit) for write‑completion detection.
| Memory size | 128 K ×8 (1 Mbit) |
|---|---|
| Page size | 128 Bytes |
| Number of pages | 1024 |
| Endurance | 100 000 cycles (typical) |
| Data retention | >100 years |
| Active current (5 V) | 20 mA (typical) |
| Standby current | 10 µA (typical) |
| Page‑write cycle time | 5 ms (typical) |
| Byte‑write cycle time | 39 µs (typical) |
| Read access time (5 V) | 70 ns – 90 ns |
| Operating voltage (EE010) | 5.0 V ±10 % |
| Operating voltage (LE010) | 3.0 V – 3.6 V |
| Operating voltage (VE010) | 2.7 V – 3.6 V |
The devices are rated for 100 000 write cycles typical.
A full memory rewrite can be completed in about 5 seconds typical.
The SST29LE010 operates from a 3.0 V to 3.6 V supply.