SST29EE020 / SST29LE020 / SST29VE020 are 256K 2 Mbit Page-Mode EEPROM with single voltage read and write operations, superior reliability, low power consumption and fast page write operation and fast read access time.
This document is a technical datasheet for the Silicon Storage Technology SST29EE020, SST29LE020, and SST29VE020 devices. These are 256K x8 CMOS page-write EEPROMs manufactured using proprietary SuperFlash technology.
The datasheet details device operation including read/write cycles, software data protection schemes, and chip-erase functions. It specifies electrical characteristics such as voltage ranges (3.0V to 5.0V depending on the specific model), active current consumption, and page-write cycle times.
| Memory Capacity | 2 Mbit (256K x8) |
|---|---|
| Endurance | 100,000 Cycles (typical) |
| Data Retention | Greater than 100 years |
| Active Current (5V) | 20 mA (typical) |
| Standby Current | 10 uA (typical) |
| Page-Write Cycle Time | 5 ms (typical) |
| Effective Byte-Write Cycle Time | 39 us (typical) |
The SST29EE020 requires a single 5.0V-only power supply.
The SST29LE020 operates with a single power supply of 3.0-3.6V.
The SST29VE020 operates with a single power supply of 2.7-3.6V.
The device contains 2048 pages with 128 Bytes per page.