This document describes the features and characteristics of SST 28SF040 5.0V-only 4 Megabit SuperFlash EEPROM, including 5V read and write operations, CMOS SuperFlash EEPROM technology, memory organization, sector erase capability, low power consumption, fast erase and programming operations, data protection features, and data interface compatibility.
The SST 28SF040 is a 512K x 8 bit CMOS sector erase, byte program EEPROM manufactured using Silicon Storage Technology's proprietary SuperFlash technology. It operates with a single 5.0-volt power supply and is compatible with industry standard EPROM, flash EPROM, and EEPROM pinouts. The device is designed for applications requiring reprogrammable nonvolatile mass storage of program, configuration, or data memory.
| Memory Capacity | 4 Megabit (512K x 8) |
|---|---|
| Endurance | 100,000 Cycles (typical) |
| Data Retention | Greater than 100 years |
| Active Current | 15 mA (typical) |
| Standby Current | 5 uA (typical) |
| Byte Program Time | 35 us (typical) |
| Sector Erase Time | 2ms (typical) |
| Complete Memory Rewrite Time | 20 sec (typical) |
| Access Time | 120, 150, and 200 ns |
| Sector Size | 256 bytes per Sector |
The device erases and programs with a 5.0-volt only power supply.
The end of a write cycle can be detected by monitoring the Data# Polling bit, the Toggle bit, or by two successive reads of the same data.
The Chip Erase operation will terminate after a maximum of 20 ms.