The SST29EE512 / SST29LE512 / SST29VE512 are 64K x8 page-mode EEPROMs with single voltage read and write operations. They feature superior reliability, low power consumption, fast page-write operation, fast read access time, latched address and data, automatic write timing, internal VPP generation, end of write detection, toggle bit, data# polling, hardware and software data protection, product identification accessible via software operation, TTL I/O compatibility, JEDEC standard flash EEPROM pinouts and command sets.
This data sheet describes the 512‑Kbit (64K × 8) page‑mode EEPROM family from SST. It lists the three voltage‑compatible variants – SST29EE512 (5 V), SST29LE512 (3.0‑3.6 V) and SST29VE512 (2.7‑3.6 V) – and highlights key features such as single‑voltage operation, high endurance, low power consumption, fast page‑write and read access times, and JEDEC‑standard pinouts.
The document details device operation, including read and write cycles, software and hardware data‑protection schemes, status‑detection methods (Data# Polling and Toggle Bit), product identification commands, electrical characteristics, absolute‑maximum ratings, and mechanical packaging options (32‑lead PLCC, 32‑lead TSOP, 32‑pin PDIP).
| Memory size | 64K × 8 (512 Kbit) |
|---|---|
| Endurance | 100,000 cycles (typical) |
| Data retention | Greater than 100 years |
| Active current (5 V) | 20 mA (typical) |
| Active current (3.0/2.7 V) | 10 mA (typical) |
| Standby current | 10 µA (typical) |
| Page‑write cycle time | 5 ms (typical) |
| Complete memory rewrite time | 2.5 s (typical) |
| Read access time (5 V) | 70 ns (typical) |
| Supply voltage (SST29EE512) | 5.0 V ±10 % |
The devices are rated for 100,000 write/erase cycles typical.
SST29EE512 uses 5.0 V (±10 %), SST29LE512 uses 3.0‑3.6 V, and SST29VE512 uses 2.7‑3.6 V.