This datasheet provides the features, characteristics and specifications of the 1Mbit / 2Mbit / 4Mbit (x8) Multi-Purpose Flash SST39SF010A / SST39SF020A / SST39SF040.
The SST39SF010A/020A/040 are CMOS multi‑purpose flash (MPF) devices built with Silicon Storage Technology's SuperFlash technology. They offer high‑performance byte‑programming, sector‑erase capability, and low power consumption, operating from a 4.5‑5.5 V supply.
The data sheet details device organization, pin assignments for PLCC, TSOP and PDIP packages, command sequences, timing diagrams, electrical characteristics, and reliability specifications for use in a wide range of applications.
| Memory density | 1 Mbit / 2 Mbit / 4 Mbit (x8) |
|---|---|
| Operating voltage (read/write) | 4.5 V – 5.5 V |
| Active current (typical, 14 MHz) | 10 mA |
| Standby current (typical, 14 MHz) | 30 µA |
| Sector size | Uniform 4 KByte sectors |
| Byte‑Program time (typical) | 14 µs |
| Chip rewrite time (typical) | 2 s (SST39SF010A), 4 s (SST39SF020A), 8 s (SST39SF040) |
| Endurance cycles (typical) | 100,000 cycles |
| Industrial temperature range | -40 °C to +85 °C |
| Package options | 32‑lead PLCC, 32‑lead TSOP (8 mm × 14 mm), 32‑pin PDIP |
The devices operate from a 4.5 V to 5.5 V supply for both read and write functions.
Typical sector‑erase time is 18 ms.
The typical active current is 10 mA.
The flash memory is rated for 100,000 program/erase cycles (typical).